FDD3672

N-ChannelUltraFETTrenchMOSFET100V,44A,28m?

Features •rDS(ON)=24mΩ(Typ.),VGS=10V,ID=44A •Qg(tot)=24nC(Typ.),VGS=10V •LowMillerCharge •LowQrrBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/D

FDD3672

N-Channel100-V(D-S)MOSFET

FDD3672

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=40A RDS(ON)

FDD3672

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=44A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD3672-TP

N-ChannelMOSFET

Application| «ReverseBatteryprotection| Loadswitch «Powermanagement «PWMApplication|

FDMS3672

N-ChannelUltraFETTrenchMOSFET100V,22A,23mohm

GeneralDescription UItraFETdevicescombinecharacteristicsthatenablebenchmarkefficiencyinpowerconversionapplications.OptimizedforrDS(on),lowESR,lowtotalandMillergatecharge,thesedevicesareidealforhighfrequencyDCtoDCconverters. Features ■MaxrDS(on)=23mΩatVGS

FDP3672

N-ChannelPowerTrenchMOSFET105V,41A,33m?

Features •rDS(ON)=25mΩ(Typ.),VGS=10V,ID=41A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff

FDP3672

iscN-ChannelMOSFETTransistor

FDS3672

N-ChannelPowerTrenchMOSFET100V,7.5A,22m?

Features •rDS(ON)=19mΩ(Typ.),VGS=10V,ID=7.5A •Qg(tot)=28nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse) Applications •DC/DCconvertersandOff-LineUPS •Distributed

FDS3672

N-ChannelMOSFET

Features •Qg(tot)=28nC(Typ.),VGS=10V •RDS(ON)=23mΩ,VGS=10V,ID=7.5A •LowMillerCharge •LowQRRBodyDiode •Optimizedefficiencyathighfrequencies •UISCapability(SinglePulseandRepetitivePulse)