1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8/64K x 16) nvSRAM

Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor

文件：810.8 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司