Small-signal Schottky barrier diode

Feature：High-speed switching / Low VF\nInternal Connection：Single\nNumber of Circuits：1\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Average Forward Current IO 0.2 A \nReverse Voltage VR 30 V ;

Toshiba

东芝

High-Speed Switching

文件：128.27 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：SC-76，SOD-323；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30V 200MA USC

Toshiba Semiconductor and Storage

4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to

文件：128.78 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

文件：234.99 Kbytes 页数：17 Pages

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

文件：234.99 Kbytes 页数：17 Pages

PANASONIC

松下