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MBR835

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MBR835

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR835RL

AxialLeadRectifiers

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−voltage,high−frequencyinvert

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MBRB835

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Gu

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MBRD835

SCHOTTKYRECTIFIER

SMCSangdest Microelectronic (Nanjing) Co., Ltd

烧结金属

MBRD835

SchottkyBarrierRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MBRD835

MBRD835SCHOTTKYRECTIFIER

Features 150℃TJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability “-A”isanAEC-Q101

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微电子桑德斯微电子器件(南京)有限公司

MBRD835L

SWITCHMODE??PowerRectifirersDPAKSurfaceMountPackage

ThisSWITCHMODEpowerrectifierwhichusestheSchottkyBarrierprinciplewithaproprietarybarriermetal,isdesignedforuseasoutputrectifiers,freewheeling,protectionandsteeringdiodesinswitchingpowersupplies,invertersandotherinductiveswitchingcircuits.Thisstateoftheartd

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MBRD835L

8ALOWVFSCHOTTKYBARRIERRECTIFIER

Features •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •VeryLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications •PlasticMaterial:ULFlammabilit

DIODESDiodes Incorporated

美台半导体

MBRD835L

SWITCHMODEPowerRectifier

Thisswitch−modepowerrectifierwhichusestheSchottkyBarrierprinciplewithaproprietarybarriermetal,isdesignedforuseasoutputrectifiers,freewheeling,protectionandsteeringdiodesinswitchingpowersupplies,invertersandotherinductiveswitchingcircuits. Features •LowForwa

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    CST-835G

  • 制造商:

    CHINASEMI

  • 制造商全称:

    China Semiconductor Corporation

  • 功能描述:

    0.8 Inch Triad Digit Display

供应商型号品牌批号封装库存备注价格
CONVERT/锴威特
24+
TO252-2
5000
原装正品保障优势供应
询价
MURATA
24+
12800
询价
MUR
23+
61500
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Luminus
20000
询价
更多CST-835G供应商 更新时间2025-7-29 14:41:00