CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

丝印：86330D；Package：LSON-CLIP(DQZ)；CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：995.5 Kbytes 页数：23 Pages

TI

德州仪器

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

文件：1.19752 Mbytes 页数：27 Pages

TI

德州仪器