首页>CSD86311W1723>规格书详情
CSD86311W1723中文资料采用 1.7mm x 2.3mm WLP 封装的双路共源极、42mΩ、25V、N 沟道 NexFET™ 功率 MOSFET数据手册TI规格书
CSD86311W1723规格书详情
描述 Description
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
特性 Features
• Dual N-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1.7 mm × 2.3 mm
• Ultra Low Qg and Qgd
• Pb Free
• RoHS Compliant
• Halogen Free
• APPLICATIONS
• Battery Management
• Battery Protection
• DC-DC Converters
技术参数
- 制造商编号
：CSD86311W1723
- 生产厂家
：TI
- Configuration
：Dual Common Source
- Rds(on) max at VGS=4.5 V (mOhms)
：42
- IDM - pulsed drain current (Max) (A)
：4.5
- QG typ (nC)
：3.1
- QGD typ (nC)
：0.33
- Package (mm)
：WLP1.7x2.3
- VGS (V)
：10
- VGSTH typ (V)
：1
- ID - silicon limited at Tc=25degC (A)
：4.5
- ID - package limited (A)
：4.5
- Logic level
：Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
询价 | ||
TI |
2016+ |
BGA |
24028 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
TI |
13+ |
BGA12 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI |
25+ |
BGA |
24028 |
原装正品,假一罚十! |
询价 | ||
TI/德州仪器 |
25+ |
BGA |
32360 |
TI/德州仪器全新特价CSD86311W1723即刻询购立享优惠#长期有货 |
询价 | ||
TI/德州仪器 |
24+ |
1415 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
TI/德州仪器 |
2517+ |
1127 |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
TI/德州仪器 |
2223+ |
BGA12 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
TI/德州仪器 |
BGA |
125000 |
一级代理原装正品,价格优势,长期供应! |
询价 | |||
TI |
23+ |
NA |
602 |
专做原装正品,假一罚百! |
询价 |
