首页>CSD86311W1723>规格书详情
CSD86311W1723中文资料德州仪器数据手册PDF规格书
CSD86311W1723规格书详情
1FEATURES
• Dual N-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1.7 mm × 2.3 mm
• Ultra Low Qg and Qgd
• Pb Free
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Battery Protection
• DC-DC Converters
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with thermal characteristics in an ultra low
profile. Low on resistance and gate charge coupled
with the small footprint and low profile make the
device ideal for battery operated space constrained
application in load management as well as DC-DC
converter applications
产品属性
- 型号：
CSD86311W1723
- 功能描述：
MOSFET Dual P-Channel Nex FET Pwr MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
询价 | ||
TI |
25+ |
BGA |
24028 |
原装正品,假一罚十! |
询价 | ||
TI/德州仪器 |
24+ |
1415 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
TI |
13+ |
BGA12 |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
TI/德州仪器 |
21+ |
BGA |
71893 |
原装现货假一赔十 |
询价 | ||
TI |
1725+ |
NA |
3256 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
TI |
23+ |
NA |
602 |
专做原装正品,假一罚百! |
询价 | ||
TI |
三年内 |
1983 |
只做原装正品 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI |
19+ |
BGA12 |
68369 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 |
