丝印：85312E；Package：VSON；Dual 20 V N-Channel NexFET™ Power MOSFETs

1FEATURES • Common Source Connection • Low Drain to Drain On-Resistance • Space Saving SON 3.3 x 3.3 mm Plastic Package • Optimized for 5 V Gate Drive • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free APPLICATIONS • Adaptor or USB I

文件：1.20772 Mbytes 页数：15 Pages

TI

德州仪器

Dual 20 V N-Channel NexFET™ Power MOSFETs

1FEATURES • Common Source Connection • Low Drain to Drain On-Resistance • Space Saving SON 3.3 x 3.3 mm Plastic Package • Optimized for 5 V Gate Drive • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free APPLICATIONS • Adaptor or USB I

文件：1.20772 Mbytes 页数：15 Pages

TI

德州仪器

Dual 20 V N-Channel NexFET Power MOSFETs

文件：1.4649 Mbytes 页数：13 Pages

TI

德州仪器

Dual 20 V N-Channel NexFE Power MOSFETs

文件：1.46103 Mbytes 页数：13 Pages

TI

德州仪器