丝印：CSD19536KTT；Package：DDPAK；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：DDPAK；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：TO-263；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：TO-263；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：DDPAK；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：DDPAK；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：TO-263；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

丝印：CSD19536KTT；Package：TO-263；CSD19536KTT 100V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Lead-free terminal plating • RoHS compliant • Halogen free • D2PAK plastic package 2 Applications • Secondary side synchronous rectifier • Hot swap • Motor control 3 Description This 100V, 2mΩ, D2PAK (T

文件：784.56 Kbytes 页数：16 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：322.16 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel NexFET Power MOSFET

文件：882.06 Kbytes 页数：14 Pages

TI

德州仪器