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首页>CSD19536KTT>详情
CSD19536KTT_TI/德州仪器_CSD19536KTT 100 V N-Channel NexFET Power MOSFET赛特兴科技3部
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产品属性
- 类型
描述
- 型号
:CSD19536KTT
- Configuration
:Single
- Rds(on) max at VGS=10 V (mOhms)
:2.4
- IDM - pulsed drain current (Max) (A)
:400
- QG typ (nC)
:118
- QGD typ (nC)
:17
- Package (mm)
:D2PAK
- VGS (V)
:20
- VGSTH typ (V)
:2.5
- ID - silicon limited at Tc=25degC (A)
:272
- ID - package limited (A)
:200
- Logic level
:No
供应商
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