丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

丝印：CSD19531；Package：VSONP；CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Primary Side Telecom • Secondary Side Synchronous Rectifier • Motor Control 3 Description Thi

文件：798.73 Kbytes 页数：13 Pages

TI

德州仪器

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：321.58 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel NexFET??Power MOSFETs

文件：838.5 Kbytes 页数：7 Pages

TI

德州仪器