CS9N80F规格书批发供应锴威特Convert-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CS9N80F	文件：300 bytes Page：1 Pages	800V N-Channel Planar MOSFET	Convert 锴威特	Convert
IXFH9N80	文件：206.2 Kbytes Page：4 Pages	HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast i 文件：206.2 Kbytes 页数：4 Pages	IXYS 艾赛斯	IXYS
IXFH9N80Q	文件：90.81 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg,High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox 文件：90.81 Kbytes 页数：2 Pages	IXYS 艾赛斯	IXYS
IXFT9N80Q	文件：90.81 Kbytes Page：2 Pages	HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg,High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox 文件：90.81 Kbytes 页数：2 Pages	IXYS 艾赛斯	IXYS

更多CS9N80F供应商更新时间2026-4-18 11:06:00