MOS 场效应晶体管--普通MOSFET

CRMICRO

华润微电子

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：189.45 Kbytes 页数：9 Pages

Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 页数：11 Pages

Intersil

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 页数：11 Pages

Intersil