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HGTD7N60A4S

600V, SMPS Series N-Channel IGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

HGTG7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

HGTG7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG7N60A4

600V,SMPSSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

Intersil

Intersil Corporation

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

详细参数

  • 型号:

    HGTD7N60A4S

  • 功能描述:

    IGBT 晶体管 TO-252

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集电极—发射极最大电压

  • VCEO:

    650 V

  • 集电极—射极饱和电压:

    2.3 V

  • 栅极/发射极最大电压:

    20 V 在25

  • C的连续集电极电流:

    150 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    187 W

  • 封装/箱体:

    TO-247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD
24+
TO-252AA-3
8866
询价
FAIRCHILD
05+
原厂原装
6070
只做全新原装真实现货供应
询价
Fairchild
23+
TO-252
9500
专业优势供应
询价
INFINEON/英飞凌
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
INTERSIL
22+
TO-252TO-251
6000
十年配单,只做原装
询价
INTERSIL
23+
TO-252(DPAK)
6000
原装正品,支持实单
询价
INTERSIL
22+
SOT252
100000
代理渠道/只做原装/可含税
询价
INTERSIL
2023+环保现货
TO-252
18000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
INTERSIL
23+
TO-252(DPAK)
8400
专注配单,只做原装进口现货
询价
INTERSIL
2023+
TO-252
50000
原装现货
询价
更多HGTD7N60A4S供应商 更新时间2025-7-24 16:30:00