IRF3710PBF

57A,100VHeatsinkPlanarN-ChannelPowerMOSFET

IRF3710S

PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF3710S

IscN-ChannelMOSFETTransistor

IRF3710SPBF

HEXFET짰PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A)

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF3710STRLPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF3710STRRPBF

HEXFET짰PowerMOSFET

VDSS=100V RDS(on)=23mΩ ID=57A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

IRF3710Z

N-ChannelMOSFETTransistor

IRF3710Z

N-ChannelEnhancementModeMOSFET

Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)