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F30N10G

N-ChannelEnhancementMOSFET

Features •VDS=100V,ID=30A •RDS(ON)=17mΩ@VGS=10V(Typ.) •RDS(ON)=22mΩ@VGS=4.5V(Typ.) •HighPowerandcurrenthandingcapability •Leadfreeproductisacquired •SurfaceMountPackage MainApplications •BatteryProtection •LoadSwitch •PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

FIR30N10LG

100VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FTK30N10D

N-ChannelPowerMOSFET

FS

First Silicon Co., Ltd

HLDD30N10

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

HLDD30N10

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

HM30N10

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM30N10D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HM30N10K

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

LMAK30N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

P30N10

N-channel100V,0.02廓typ.,32ASTripFET??F7PowerMOSFETinaTO-220package

Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features AmongthelowestRDS(o

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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