Planar MOSFET

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锴威特

N-Channel MOSFET 500V, 11.5A, 0.65廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 22nC) • Low Crss ( Typ. 12pF) • Fast switching • 100 avalan

文件：366.6 Kbytes 页数：9 Pages

Fairchild

仙童半导体

Optimized Switch for Discontinuous Current Mode Power Factor Correction

文件：438.39 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：331.7 Kbytes 页数：2 Pages

ISC

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