Planar MOSFET

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锴威特

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V, -10.5A, RDS(ON) = 0.36W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. Comparable to AEC-Q101.

文件：679.92 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V, -10.5A, RDS(ON) = 0.36W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. Comparable to AEC-Q101.

文件：679.92 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：413.7 Kbytes 页数：4 Pages

CET

华瑞