CS110N06T规格书应用电路贸易商锴威特-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CS110N06T	文件：300 bytes Page：1 Pages	Planar MOSFET	Convert 锴威特	Convert
G110N06K	文件：572.05 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：572.05 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G110N06KA	文件：954.24 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters 文件：954.24 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD
G110N06T	文件：987.51 Kbytes Page：6 Pages	N-Channel Enhancement Mode Power MOSFET Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters 文件：987.51 Kbytes 页数：6 Pages	GOFORD 谷峰半导体	GOFORD

更多CS110N06T供应商更新时间2025-11-24 9:32:00