Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Freq

文件：533.52 Kbytes 页数：7 Pages

WOLFSPEED

Silicon Carbide Power MOSFET

文件：534.19 Kbytes 页数：7 Pages

Cree

科锐

1200 V Bare Die SiC MOSFETs – Gen 2

Robust intrinsic diode with low reverse recovery charge (Qrr)High-speed switching with low output capacitanceLow conduction losses over temperatureAvalanche ruggedness • Robust intrinsic diode with low reverse recovery charge (Qrr)\n• High-speed switching with low output capacitance\n• Low conduction losses over temperature\n• Avalanche ruggedness;

Wolfspeed(CREE)

High Speed Switching with Low Capacitances

文件：661.53 Kbytes 页数：6 Pages

Cree

科锐

SILICON CARBIDE 1200V 41A POWER MOSFET

• High blocking voltage with low on-resistance • High Speed Switching with low capacitances • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up • Silver back metal

文件：2.46679 Mbytes 页数：7 Pages

SMCDIODE

桑德斯微电子