SILICON CARBIDE 1200V 41A POWER MOSFET

• High blocking voltage with low on-resistance • High Speed Switching with low capacitances • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up • Silver back metal

文件：2.46679 Mbytes 页数：7 Pages

SMCDIODE

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Bare Die SiC MOSFETs

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Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Freq

文件：533.52 Kbytes 页数：7 Pages

WOLFSPEED

Silicon Carbide Power MOSFET

文件：534.19 Kbytes 页数：7 Pages

Cree

科锐

High Speed Switching with Low Capacitances

文件：661.53 Kbytes 页数：6 Pages

Cree

科锐