MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • DC / DC converter applications. • Composite type with a N-channel sillicon MOSFET (MCH3406) and a schottky barrier diode (SB07-03C) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-re

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SANYO

三洋

Nch+SBD

ONSEMI

安森美半导体

Silicon Power Rectifier Diode, 50 Amp

Description: The NTE5826 thru NTE5829 are silicon power rectifier diodes in a press–fit type package designed for use in all medium–current applications or for higher current industrial alternators and chassis mounted power supply rectifiers. Features: ● 50 Amp @ TC = +150°C ● 600

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NTE

16-A 12-V Input Adjustable Integrated Switching Regulator

文件：173.98 Kbytes 页数：10 Pages

TI

德州仪器

HotSwitch??USB Power Distribution Switch

DESCRIPTION USB power distribution switches are high-side n-channel MOSFET switches with built-in overcurrent protection and low on-state resistance. The SC5826 switch is designed to meet the USB requirements for power switching and maintenance-free fault protection for self-powered & bus-p

文件：151.79 Kbytes 页数：8 Pages

SEMTECH

先之科