Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single CPH3

Bipolar Transistor –15V, –1.5A, Low VCE(sat), PNP Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • Hig

文件：583.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). • High allowable po

文件：54.66 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

文件：634.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

文件：634.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

文件：634.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissip

文件：53.78 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3

Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)

文件：631.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3

Bipolar Transistor (–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)

文件：631.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Compact Motor Driver Applications

Features • Small saturation voltage. • Contains a diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacity. • Compact package facilitates implementation of high-density, small-sized hybrid ICs.

文件：39.31 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor

Bipolar Transistor –12V, –3A, Low VCE(sat) PNP Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High a

文件：283.18 Kbytes 页数：5 Pages

ONSEMI

安森美半导体