PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipa

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SANYO

三洋

PNP / NPN Epitaxial Planar Silicon Transistors

Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipation. Applications • Relay dri

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三洋

Voltage Suppressor

Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, la

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Voltage Suppressor

Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, la

文件：272.49 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power di

文件：59.9 Kbytes 页数：5 Pages

SANYO

三洋

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • High-speed switching. • Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.

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SANYO

三洋

CPH3143 / CPH3243

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.9mm). • High allowable power dissip

文件：66.61 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single CPH3

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, lamp

文件：579.11 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipati

文件：44.76 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single CPH3

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, lamp

文件：579.11 Kbytes 页数：6 Pages

ONSEMI

安森美半导体