Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single CPH3

Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers,

文件：587.31 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

DC/DC Converter Applications

Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay drivers,

文件：39.93 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -15V, -6A, Low VCE(sat), PNP Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, la

文件：581.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DC/DC Converter Applications

Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay drivers,

文件：52.38 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor -15V, -6A, Low VCE(sat), PNP Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • Relay drivers, la

文件：581.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

文件：55.66 Kbytes 页数：5 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. A

文件：52.12 Kbytes 页数：5 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay driv

文件：54.05 Kbytes 页数：5 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

文件：51.15 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single CPH3

Bipolar Transistor –15V, –1.5A, Low VCE(sat), PNP Single CPH3 Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • Hig

文件：583.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体