8-bit Withstand Voltage Microcontroller

Features • Adoption of MBIT Process • Large Current Capacity • Low Collector to Emitter Saturation Voltage • High Speed Switching • Ultrasmall Package Facilitates Miniaturization in End Products (mounting height : 0.9mm) • High Allowable Power Dissipation Typical Applications • Relay Drive

文件：534.57 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipati

文件：47.62 Kbytes 页数：5 Pages

SANYO

三洋

8-bit Withstand Voltage Microcontroller

Features • Adoption of MBIT Process • Large Current Capacity • Low Collector to Emitter Saturation Voltage • High Speed Switching • Ultrasmall Package Facilitates Miniaturization in End Products (mounting height : 0.9mm) • High Allowable Power Dissipation Typical Applications • Relay Drive

文件：534.57 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipation. Applications • DC

文件：40.2 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipation. Applications • DC

文件：39.32 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

文件：41 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

文件：57.8 Kbytes 页数：4 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). • High allowable power dissipation. Applications • DC

文件：58.01 Kbytes 页数：4 Pages

SANYO

三洋

DC/DC Converter Applications

Features • Adoption of FBET and MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers,

文件：73.14 Kbytes 页数：4 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation. Applications

文件：76.45 Kbytes 页数：4 Pages

SANYO

三洋