Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

文件：634.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：SC-96；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 1.5A 3CPH

ONSEMI

安森美半导体

Surface Mount Zener Diodes

文件：66.41 Kbytes 页数：3 Pages

COMCHIP

典琦

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input

文件：118.2 Kbytes 页数：4 Pages

DIODES

美台半导体

Electret condenser microphone - Supply Voltage range: 0.9 to 10V DC

文件：151.83 Kbytes 页数：8 Pages

KNOWLES

楼氏电子