Small Signal Transistor NPN - RF Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization

文件：181.49 Kbytes 页数：2 Pages

CENTRAL

Small Signal Transistor NPN - RF Transistor Chip

Central

NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

文件：450.73 Kbytes 页数：2 Pages

CENTRAL

Small Signal Transistor NPN - RF Transistor Chip

文件：378.69 Kbytes 页数：2 Pages

CENTRAL

P-Channel JFET Die

文件：465.81 Kbytes 页数：9 Pages

CENTRAL

PNP - High Voltage Transistor Die

文件：530.8 Kbytes 页数：9 Pages

CENTRAL

P-Channel JFET Die

文件：465.81 Kbytes 页数：9 Pages

CENTRAL

PNP - High Voltage Transistor Die

文件：530.8 Kbytes 页数：9 Pages

CENTRAL

NPN - RF Transistor Die 40mA, 15 Volt

文件：420.64 Kbytes 页数：4 Pages

CENTRAL

NPN - RF Transistor Die 50mA, 12 Volt

文件：451.04 Kbytes 页数：4 Pages

CENTRAL