Power Transistors NPN - Silicon Darlington Transistor Chip

PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 80 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 18 x 27 MILS Emitter Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Pd/Ag - 20,000Å

文件：36.75 Kbytes 页数：1 Pages

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Directional Coupler

Description The CP Series is a monolithic directional coupler for low cost wireless applications. Product Features • Passive Integration on Silicon • Low Insertion Loss • High Isolation • Solder Pad • Low Cost • Pb Free/RoHS Compliant Application • Repeater • Base Station • RF Sub-Syst

文件：154.26 Kbytes 页数：2 Pages

RFHIC

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 800A

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 800A Price** : 6,440.00 USD

文件：72.39 Kbytes 页数：2 Pages

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施耐德

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 800A

BUSWAY PLUG-IN STRAIGHT LENGTH 10FT 800A Price** : 8,120.00 USD

文件：64.14 Kbytes 页数：2 Pages

SCHNEIDER

施耐德

BUSWAY PLUG-IN STRAIGHT LENGTH 4FT 800A

BUSWAY PLUG-IN STRAIGHT LENGTH 4FT 800A Price** : 2,576.00 USD

文件：63.85 Kbytes 页数：2 Pages

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施耐德

BUSWAY PLUG-IN STRAIGHT LENGTH 6 FT 800A

BUSWAY PLUG-IN STRAIGHT LENGTH 6 FT 800A Price** : 4,872.00 USD

文件：72.7 Kbytes 页数：2 Pages

SCHNEIDER

施耐德

BUSWAY PLUG-IN STRAIGHT LENGTH 8 FOOT

BUSWAY PLUG-IN STRAIGHT LENGTH 8 FOOT Price** : 5,152.00 USD

文件：63.75 Kbytes 页数：2 Pages

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施耐德

120...195 Watt DC-DC Converters

120...195 Watt DC-DC Converters Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage • Extremely slim case (4 TE), fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range –40..

文件：72.35 Kbytes 页数：5 Pages

POWER-ONE

Power Transistor NPN - Silicon Power Transistor Chip

PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 106 x 106 MILS Die Thickness 12 MILS Base Bonding Pad Area 25 x 33 MILS Emitter Bonding Pad Area 30 x 36 MILS Top Side Metallization Al 50,000Å Back Side Metallization Ag 10,000Å

文件：32.689 Kbytes 页数：2 Pages

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Small Signal Transistor NPN - Saturated Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.4 x 12.5 MILS Emitter Bonding Pad Area 4.4 x 12.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：201.99 Kbytes 页数：2 Pages

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