COP888EG-DAA/N资料使用说明书贸易商第3页-114ic电子网

首页 >COP888EG-DAA/N>规格书列表

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BLF888	文件：435.75 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A500WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorisoptimizedfordigitalapplicationsandcandeliver110WaverageDVB-TbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessof	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888A	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888A	文件：1.53792 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1through	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888A	文件：443.34 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BLF888A(S)	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888AS	文件：1.53792 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1through	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888AS	文件：443.34 Kbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BLF888AS	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888B	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888B	文件：1.87329 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888B(S)	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888BS	文件：1.87329 Mbytes Page：17 Pages	UHFpowerLDMOStransistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888BS	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BLF888D	文件：1.07778 Mbytes Page：12 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits Highefficiency Highpowergain Excellentruggedness(VSW	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888DS	文件：1.07778 Mbytes Page：12 Pages	UHFpowerLDMOStransistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits Highefficiency Highpowergain Excellentruggedness(VSW	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888E	文件：1.40887 Mbytes Page：13 Pages	UHFpowerLDMOStransistor Generaldescription A750WLDMOSRFpowertransistorforasymmetricalbroadcastDohertytransmitter applicationswhichoperatesat150WDVB-Taveragepower.Theexcellentruggednessof thisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Design	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
BLF888ES	文件：1.40887 Mbytes Page：13 Pages	UHFpowerLDMOStransistor Generaldescription A750WLDMOSRFpowertransistorforasymmetricalbroadcastDohertytransmitter applicationswhichoperatesat150WDVB-Taveragepower.Theexcellentruggednessof thisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Design	AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司	Ampleon
CGD888C	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
CGY888C	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市深创辉科技有限公司	COP888EG-DAA/N	NSC	1993+		402	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
瀚佳科技(深圳)有限公司	COP888EG-DAA/N	NSC	21+		35200	一级代理/放心采购	询价
深圳市振鑫微电子科技有限公司	COP888EG-DAA/N	NSC	23+		589610	新到现货原厂一手货源价格秒杀代理!	询价
深圳市昌和盛利电子有限公司	COP888G	NSC	23+	PLCC44	9823		询价
深圳市莱克讯科技有限公司	COP888GD-CNB/EL	NSC	2017+	PLCC	25689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市一线半导体有限公司	COP888GD-CNB/EL	NSC		PLCC	1		询价
深圳市佳鑫美电子科技有限公司	COP888GW-DME/V	NSC	22+	PLCC	2645	100%全新原装公司现货供应!随时可发货	询价
深圳市毅创腾电子科技有限公司	COP888GW-DME/V	NS	23+	PLCC68	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
柒号芯城电子商务(深圳)有限公司	COP888GW-DMEV	NS	2023+	PLCC	700000	柒号芯城跟原厂的距离只有0.07公分	询价
深圳深宇韬电子科技有限公司	COP888GW-DMEV	NS	2023+	PLCC	8800	正品渠道现货终端可提供BOM表配单。	询价

更多COP888EG-DAA/N供应商更新时间2024-5-25 14:30:00

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