首页 >CPC5602C>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

CPC5602C

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件:76.71 Kbytes 页数:4 Pages

Clare

Clare, Inc.

CPC5602C

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件:85.3 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5602C

N-Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon ga

文件:112.77 Kbytes 页数:5 Pages

IXYS

艾赛斯

CPC5602C

N-Channel Depletion Mode FET

文件:111.34 Kbytes 页数:5 Pages

Clare

Clare, Inc.

CPC5602CTR

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件:85.3 Kbytes 页数:3 Pages

Clare

Clare, Inc.

CPC5602CTR

N-Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon ga

文件:112.77 Kbytes 页数:5 Pages

IXYS

艾赛斯

CPC5602CTR

N Channel Depletion Mode FET

Description The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMO

文件:76.71 Kbytes 页数:4 Pages

Clare

Clare, Inc.

CPC5602CTR

N-Channel Depletion Mode FET

文件:111.34 Kbytes 页数:5 Pages

Clare

Clare, Inc.

详细参数

  • 型号:

    CPC5602C

  • 功能描述:

    MOSFET MOSFET N-CHANNEL 350V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
CLARE
25+
SOT-223
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CPCLARE
13+
43062
原装分销
询价
LITELINK
04+
2000
询价
CLARE
25+
SOT-223
3500
福安瓯为您提供真芯库存,真诚服务
询价
CLARE
17+
SOT-223
6200
100%原装正品现货
询价
CLARE
311
SOT223
1265
全新原装现货绝对自己公司特价库
询价
CLARE
23+
SOP
5000
原装正品,假一罚十
询价
CLARE
25+
SOT-223
3600
绝对原装!现货热卖!
询价
CLARE
25+
SOP
18000
原厂直接发货进口原装
询价
IXYSINTEGRATEDCIRCUITSD
16+
NA
8800
原装现货,货真价优
询价
更多CPC5602C供应商 更新时间2025-10-4 13:57:00