RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power LDMOS transistor

General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness  Optimum thermal beh

文件：1.87329 Mbytes 页数：17 Pages

Ampleon

安谱隆

UHF power LDMOS transistor

A 650W LDMOS RF power transistor for DVB-T broadcast applications optimised to give extremely high power and efficiency in Doherty solutions.\n\n \n\nWhitepaper Doherty Architectures in UHF\n\nThis White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. \ Optimised for Doherty solutions in split-band (70MHz to 100MHz)\nExtremely high power (P1dB 650W)\nExtremely high Doherty efficiency (>50%)\nInternal input matching for high gain\nOptimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W;

Ampleon

安谱隆

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

文件：1.07778 Mbytes 页数：12 Pages

Ampleon

安谱隆

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  High efficiency  High power gain  Excellent ruggedness (VSW

文件：1.07778 Mbytes 页数：12 Pages

Ampleon

安谱隆

UHF power LDMOS transistor

General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Design

文件：1.40887 Mbytes 页数：13 Pages

Ampleon

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