首页 >CMXD2004TR贴片三极管>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
METALGATERFSILICONFET GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfromDCto2 | SEME-LAB Seme LAB | SEME-LAB | ||
Low-VoltageDualSPSTAnalogSwitch features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Low-VoltageDualSPSTAnalogSwitch DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Low-VoltageDualSPSTAnalogSwitch features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)1V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ComplementaryPairMOSFET •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gr | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •LoadSwitch Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGate | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance:RDS(on)=550(max)mΩ@VGS=4.5V | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”D | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedupto2KV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qu | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CENTRAL |
23+ |
SOT26 |
90000 |
北京深圳柜台现货绝对进口原装接受定货排单 |
询价 | ||
CENTRAL |
23+ |
12000 |
询价 | ||||
CEN |
22+ |
30000 |
原装现货,假一罚十,可含税原进项 |
询价 | |||
CENTRAL |
22+ |
SOT-26 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
CENTRAL |
23+ |
SOT-26 |
50000 |
原装正品 支持实单 |
询价 | ||
16+ |
SOT-26 |
38000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | |||
Centralsemi |
20+ |
SOT-26 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Centralsemi |
2023+ |
SOT-26 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
Centralse |
2020+ |
SOT-26 |
18800 |
绝对原装进口现货,假一赔十,价格优势! |
询价 | ||
CENTRAL |
1809+ |
SOT-26 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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