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D2004UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES •SIMPLIFIEDAMPLIFIERDESIGN •SUITABLEFORBROADBANDAPPLICATIONS •VERYLOWCrss •SIMPLEBIASCIRCUITS •LOWNOISE •HIGHGAIN–10dBMINIMUM APPLICATIONS •HF/VHF/UHFCOMMUNICATIONSfromDCto2

SEME-LAB

Seme LAB

DG2004

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半导体

DG2004DQ

Low-VoltageDualSPSTAnalogSwitch

DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor

VishayVishay Siliconix

威世科技威世科技半导体

DG2004DQ

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半导体

DMC2004DWK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)1V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ComplementaryPairMOSFET •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes2&am

DIODES

Diodes Incorporated

DMC2004LPK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)

DIODES

Diodes Incorporated

DMC2004VK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltageVGS(th)

DIODES

Diodes Incorporated

DMN2004DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

DMN2004DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •LoadSwitch Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGate

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004DWKQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance:RDS(on)=550(max)mΩ@VGS=4.5V

DIODES

Diodes Incorporated

DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004TK

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Ultra-SmallSurfaceMountPackage •ESDProtectedGate •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”D

DIODES

Diodes Incorporated

DMN2004VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004WK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance:RDS(ON) •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedupto2KV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qu

DIODES

Diodes Incorporated

DMN2004WK

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

供应商型号品牌批号封装库存备注价格
CENTRAL
23+
SOT26
90000
北京深圳柜台现货绝对进口原装接受定货排单
询价
CENTRAL
23+
12000
询价
CEN
22+
30000
原装现货,假一罚十,可含税原进项
询价
CENTRAL
22+
SOT-26
9600
原装现货,优势供应,支持实单!
询价
CENTRAL
23+
SOT-26
50000
原装正品 支持实单
询价
16+
SOT-26
38000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
Centralsemi
20+
SOT-26
36800
原装优势主营型号-可开原型号增税票
询价
Centralsemi
2023+
SOT-26
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
Centralse
2020+
SOT-26
18800
绝对原装进口现货,假一赔十,价格优势!
询价
CENTRAL
1809+
SOT-26
3675
就找我吧!--邀您体验愉快问购元件!
询价
更多CMXD2004TR贴片三极管供应商 更新时间2024-9-24 17:18:00