CMPA3135060S数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

描述 Description

The CMPA3135060S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach; enabling high power and power added efficiency to be achieved in a 7mm x 7mm; surface mount (QFN package). The MMIC is designed for S-Band radar power amplifier applications.

特性 Features

·3.1 – 3.5 GHz Operation
·75 W Typical Output Power
·29 dB Power Gain
·50-ohm Matched for Ease of Use
·Plastic Surface-Mount Package; 7×7 mm QFN

应用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms