CMPA2738060F数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF

描述 Description

The CMPA2738060 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package.

特性 Features

·34 dB Small Signal Gain
·85 W Typical PSAT
·Operation up to 50 V
·High Breakdown Voltage
·High Temperature Operation

应用 Application

·Civil and Military Pulsed Radar Amplifiers