CMPA2735030D中文资料30 W, 2.7 - 3.5 GHz, 50 V, GaN MMIC Power Amplifier数据手册MACOM规格书

描述 Description

The CMPA2735030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

特性 Features

·Operation up to 50 V
·High Breakdown Voltage
·Offered in a 5mm x 5mm; QFN package
·High Temperature Operation

应用 Application

·Civil and Military Pulsed Radar Amplifiers