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1N60P

SMALLSIGNALSCHOTTKYDIODES

Features ◇Metalsilliconjunctionmajoritycarrierconduction ◇Highcurrentcapability,Lowforwardvoltagedrop ◇ExtremelylowreversecurrentIR ◇Ultraspeedswitchingcharacteristics ◇Smalltemperaturecoefficientofforwardcharacteristics ◇Satisfactorywavedetectionefficiency ◇

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

1N60P

SMALLSIGNALSCHOTTKYDIODES

ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

1N60P

POINTCONTACTGERMANIUMDIODE

PointContactGermaniumDiodes 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH

Semtech Corporation

1N60P

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60P

SchottkyBarrierRectifier

Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&

MCCMicro Commercial Components

美微科美微科半导体公司

1N60P

HermeticallySealedGlassCasePointContactGermaniumDiode

PRODUCTFEATURE 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

1N60PW

SchottkyBarrierDiode

FEATURES •Highreliability •Lowforwardvoltageandreversecurrent APPLICATIONS •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60PW

SCHOTTKYBARRIERDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60PW

45VDetectionswitchtube

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60PW

SiliconSchottkyBarrierDiode

Features ●Metalsiliconjunction,majoritycarrierconduction ●Idealforusedindetectionorforswitchingontheradio,TV,etc.

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

1N60PWS

SCHOTTKYBARRIERDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

1N60PWS

SCHOTTKYBARRIERDIODE

Features ●Highreliability ●Lowforwardvoltageandreversecurrent MechanicalData ●Case:SOD-323,MoldedPlastic ●Terminals:PlatedLeadsSolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Weight:0.004grams(approx.) ●Marking:A3

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

1N60PWS

SCHOTTKYBARRIERDIODE

Features •Highreliability •Lowforwardvoltageandreversecurrent Applications •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60S

POINTCONTACTGERMANIUMDIODES

POINTCONTACTGERMANIUMDIODES 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60S

POINTCONTACTGERMANIUMDIODE

PointContactGermaniumDiodes 1N60isapointcontactdiodeemployingN-fromGermaniumandgivesanefficientandexcellentlinearitywhenusedinTVimagedetection,FMdetection,radio,AMdetection,etc.

SEMTECH

Semtech Corporation

1N60SSB

400mWlowvoltageavalanchelownoisesiliconzenerdiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

1N60SW

SchottkyBarrierDiode

FEATURES •Highreliability •Lowforwardvoltageandreversecurrent APPLICATIONS •Forelectroniccalculator,etc. •Lowcurrentrectificationandhighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

1N60Z

1.2A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC1N60ZisahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowers

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

供应商型号品牌批号封装库存备注价格
JINGDAO/晶导微
23+
TO-92
50000
全新原装正品现货,支持订货
询价
JINGDAO/晶导微
23+
NA/
95000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
NAIS
21+
35200
一级代理/放心采购
询价
NAIS
21+ROHS
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Panisonic松下
09+
5000
询价
PANASONIC/松下
2021+
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
PANASONIC/松下
2022+
NA
6500
询价
Panasonic Electric Works
2022+
原厂封装
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
PANASONIC/松下
22+
DIP
2985
只做原装自家现货供应!
询价
PANASONIC/松下
24+
DIP
990000
明嘉莱只做原装正品现货
询价
更多CM1N60S供应商 更新时间2024-6-17 11:00:00