Schottky Barrier Diode

FEATURES • High reliability • Low forward voltage and reverse current APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching

文件：233.38 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

1.2A, 600V N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power s

文件：249.77 Kbytes 页数：6 Pages

UTC

友顺

1.3A, 600V N-Channel MOSFET

文件：151.81 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-Channel 650 V (D-S) MOSFET

文件：1.0859 Mbytes 页数：9 Pages

VBSEMI

微碧半导体