23 ns and 65 ns Low Voltage Comparators

GENERAL DESCRIPTION The CMP401 and CMP402 are 23 ns and 65 ns quad comparators with separate input and output supplies. Separate supplies enable the input stage to be operated from +3 V to as high as ±6 V. The output can be supplied with either 3 V or 5 V as determined by the interface logic or a

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亚德诺

23 ns and 65 ns Low Voltage Comparators

GENERAL DESCRIPTION The CMP401 and CMP402 are 23 ns and 65 ns quad comparators with separate input and output supplies. Separate supplies enable the input stage to be operated from +3 V to as high as ±6 V. The output can be supplied with either 3 V or 5 V as determined by the interface logic or a

文件：132.77 Kbytes 页数：8 Pages

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亚德诺

23 ns and 65 ns Low Voltage Comparators

文件：130.639 Kbytes 页数：8 Pages

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亚德诺

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

文件：48.27 Kbytes 页数：2 Pages

PANJIT

強茂

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：35.51 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：37.33 Kbytes 页数：2 Pages

POLYFET