CGHV60170D中文资料170-W, 6.0-GHz, 50-V GaN HEMT Die数据手册MACOM规格书

描述 Description

Wolfspeed’s CGHV60170D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

特性 Features

·Up to 6-GHz operation