25 W, 18.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for

文件：1.28552 Mbytes 页数：10 Pages

WOLFSPEED

25 W, 18.0 GHz, GaN HEMT Die

文件：763.94 Kbytes 页数：9 Pages

Cree

科锐

25 W; 18.0 GHz; GaN HEMT Die

The CGHV1J025D is a high-voltage; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a  0.25-μm  gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applicati ·17 dB Typ. Small Signal Gain at 10 GHz\n·60% Typ. PAE at 10 GHz\n·25 W Typical PSAT\n·40 V Operation\n·Up to 18 GHz Operation;

MACOM

CREE
模块

Cree

科锐

上传：深圳市欧特拉科技有限公司

MACOM
NA

MACOM

上传：深圳市达恩科技有限公司