CGHV14500中文资料500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems数据手册MACOM规格书

描述 Description

The CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14500 ideal for  1.2 – 1.4 GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.

特性 Features

·FET tuning range UHF through 1800 MHz
·500 W Typical Output Power
·16 dB Power Gain
·68% Typical Drain Efficiency
·<0.3 dB Pulsed Amplitude Droop
·Internally pre-matched on input; unmatched output

应用 Application

·L-Band Radar Amplifiers