500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems

Description Wolfspeed’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor coul

文件：3.38474 Mbytes 页数：20 Pages

WOLFSPEED

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems

The CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14500 ideal for  1.2 – 1.4 GHz L-Band radar-amplifier applications. The transistor could be utilized for band-s ·FET tuning range UHF through 1800 MHz\n·500 W Typical Output Power\n·16 dB Power Gain\n·68% Typical Drain Efficiency\n·<0.3 dB Pulsed Amplitude Droop\n·Internally pre-matched on input; unmatched output;

MACOM

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

FET tuning range UHF through 1800 MHz 500 W Typical Output Power 16 dB Power Gain 68% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input; unmatched output • FET tuning range UHF through 1800 MHz\n•500 W Typical Output Power\n•16 dB Power Gain\n•68% Typical Drain Efficiency\n•<0.3 dB Pulsed Amplitude Droop\n•Internally pre-matched on input; unmatched output;

MACOM

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

Wolfspeed’s CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14500 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for • FET tuning range UHF through 1800 MHz\n•16 dB Power Gain\n•;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGHV14500F DEV BOARD WITH HEMT

WOLFSPEED