500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

FET tuning range UHF through 1800 MHz 500 W Typical Output Power 16 dB Power Gain 68% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input; unmatched output • FET tuning range UHF through 1800 MHz\n•500 W Typical Output Power\n•16 dB Power Gain\n•68% Typical Drain Efficiency\n•<0.3 dB Pulsed Amplitude Droop\n•Internally pre-matched on input; unmatched output;

MACOM

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGHV14500F DEV BOARD WITH HEMT

WOLFSPEED

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell

文件：381.84 Kbytes 页数：2 Pages

SAFT