500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.11706 Mbytes 页数：11 Pages

CREE

科锐

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

FET tuning range UHF through 1800 MHz 500 W Typical Output Power 16 dB Power Gain 68% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input; unmatched output • FET tuning range UHF through 1800 MHz\n•500 W Typical Output Power\n•16 dB Power Gain\n•68% Typical Drain Efficiency\n•<0.3 dB Pulsed Amplitude Droop\n•Internally pre-matched on input; unmatched output;

MACOM

Package：440117；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 50V 440117

WOLFSPEED

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

FET tuning range UHF through 1800 MHz 500 W Typical Output Power 16 dB Power Gain 68% Typical Drain Efficiency <0.3 dB Pulsed Amplitude Droop Internally pre-matched on input; unmatched output • FET tuning range UHF through 1800 MHz\n•500 W Typical Output Power\n•16 dB Power Gain\n•68% Typical Drain Efficiency\n•<0.3 dB Pulsed Amplitude Droop\n•Internally pre-matched on input; unmatched output;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGHV14500F DEV BOARD WITH HEMT

WOLFSPEED