CG2H80060D

60-W, 8.0-GHz, GaN HEMT Die;

Wolfspeed’s CG2H80060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.\n

CG2H80060D

60 W, 8.0 GHz, GaN HEMT Die

Description Wolfspeed’sCG2H80060Disagalliumnitride(GaN)High ElectronMobilityTransistor(HEMT).GaNhassuperior propertiescomparedtosiliconorgalliumarsenide, includinghigherbreakdownvoltage,highersaturated electrondriftvelocity,andhigherthermalconductivity. GaNHEMT

CG2H80060D

60 W, 8.0 GHz, GaN HEMT Die

CG2H80060D-GP4

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF DISCRETE

CG3011QIR-10

COPPERGAT
QFP

COPPERGAT