60 W, 8.0 GHz, GaN HEMT Die

Description Wolfspeed’s CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMT

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WOLFSPEED

60 W, 8.0 GHz, GaN HEMT Die

文件：594.14 Kbytes 页数：8 Pages

CREE

科锐

60-W, 8.0-GHz, GaN HEMT Die

Wolfspeed’s CG2H80060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater powe

MACOM

60 W; 8.0 GHz; GaN HEMT Die

The CG2H80060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power densit ·28 V Operation\n·60 W Typical PSAT\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 8 GHz Operation\n·High Efficiency\n;

MACOM

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF DISCRETE

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