CG2H80060D中文资料60-W, 8.0-GHz, GaN HEMT Die数据手册MACOM规格书

描述 Description

Wolfspeed’s CG2H80060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.