CG2H40045数据手册开发板套件编程器的射频评估开发套件开发板规格书PDF
CG2H40045规格书详情
描述 Description
The CG2H40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
特性 Features
·18 dB Small Signal Gain at 2.0 GHz
·14 dB Small Signal Gain at 4.0 GHz
·55 W Typical PSAT
·60% Efficiency at PSAT
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CG2H40045
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：4000
- Peak Output Power(W)
：45
- Efficiency(%)
：55
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
23+ |
螺装 |
5000 |
公司只做原装,可配单 |
询价 | ||
m/a-com |
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
询价 | ||
MITSUBIS |
23+ |
3880 |
正品原装货价格低 |
询价 | |||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
Cree |
22+ |
NA |
2 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Cree/Wolfspeed |
100 |
询价 | |||||
CREE |
25+ |
500 |
原厂原装,价格优势 |
询价 | |||
LINEAR |
23+ |
null |
10067 |
专注配单,只做原装进口现货 |
询价 | ||
OK |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
