CG2H30070中文资料70 W; 0.5 - 3.0 GHz; GaN HEMT数据手册MACOM规格书

描述 Description

The CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.

特性 Features

·85 W POUT typical at 28 V
·10 dB Power Gain
·58% Drain Efficiency
·Internally Matched

应用 Application

·MILCOM
·Radar
·Broadband Amplifiers
·Data Link
·Electronic Counter Measures
·Signal Jamming