CG2H80060D分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

CG2H80060D属于分立半导体产品的晶体管-FETMOSFET-射频。由WOLFSPEED, INC.制造生产的CG2H80060D晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

Description

Wolfspeed’s CG2H80060D is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT). GaN has superior

properties compared to silicon or gallium arsenide,

including higher breakdown voltage, higher saturated

electron drift velocity, and higher thermal conductivity.

GaN HEMTs offer greater power density and wider

bandwidths compared to Si and GaAs transistors

Features

• 15 dB Typical Small Signal Gain at 4 GHz

• 12 dB Typical Small Signal Gain at 8 GHz

• 60 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• Up to 8 GHz Operation

• High Efficiency

• Bare die are shipped in Gel-Pak® containers

• Non-adhesive tacky membrane immobilizes die during shipment

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms